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       ECX-P33BN-16.384高精密晶振ECS-2018-080-BN低抖動(dòng)晶振ECS-1633-192-BN-TR美國(guó)伊西斯晶振ECS-3525-320-B-TR伊西斯晶振ECS-3225S18-200-FN-TR有源晶振ECS-.327-12.5-39-TR伊西斯晶振ECS-250-20-3X-TR晶振ECX-P33BN-24.576低抖動(dòng)晶振ECS-2018-240-BN有源石英晶振ECS-3518-240-B-TR高精密晶振ECS-VXO-73-27.00-TR晶體振蕩器ECS-3953M-500-BN-TR石英晶振ECS-240-16-5PX-TR無(wú)源晶振ECS-3X8耐高溫晶振ECS-120-20-3X-TR石英晶體ECX-P33BN-25.000高精密晶振ECS-3525-1000-B-TR伊西斯SMD晶振ECS-3518-400-B-TR有源石英晶振ECS-2033-160-BN大體積晶振ECS-3953M-040-BN-TR貼片晶振ECS-92.1-S-5PX-TR伊西斯晶振ECS-40-18-5PXEN-TR低損耗晶振ECS-160-20-3X-TR無(wú)源晶振ECS-2033-240-BN大體積晶振ECS-3953M-018-BN-TR進(jìn)口晶體振蕩器ECS-73-S-5PX-TR石英晶振ECS-76.8-18-5PXEN-TR高品質(zhì)晶振ECS-143-20-3X-TR伊西斯晶振ECX-P33BN-27.000石英貼片晶振ECS-3525-1250-B-TR有源晶振ECS-3951M-160-BN-TR美國(guó)伊西斯晶振ECS-1618-120-BN-TR小體積貼片晶振ECS-3953M-200-BN-TR石英晶體振蕩器ECS-3225S25-240-FN-TR貼片晶振ECS-98.3-18-5PXEN-TR晶振ECS-147.4-20-3X-TR石英晶振ECX-L32CM-14.7456石英貼片晶振ECS-3963-1000-AU-TR石英晶體振蕩器ECS-3953M-080-AU-TR有源晶振ECS-1618-192-BN-TR有源石英晶振ECS-3953M-480-AU-TR有源晶振ECS-3225S25-250-FN-TR進(jìn)口晶體振蕩器ECS-42-18-5PXEN-TR石英晶體ECX-P33BN-250.000石英貼片晶振ECS-3963-1000-BN-TR美國(guó)伊西斯晶振ECX-L32CM-150.000高頻晶振ECX-P33BN-18.432有源石英晶振ECS-2018-147.4-BN高精密晶振ECS-1633-240-BN-TR有源晶振ECS-3525-400-B-TR石英晶振ECS-3225S18-240-FN-TR美國(guó)進(jìn)口晶振ECS-240-10-37Q-ES-TR石英晶振ECS-286.3-20-3X-EN-TR高品質(zhì)晶振ECX-L32CM-155.520高頻晶振ECX-P33BN-20.000伊西斯SMD晶振ECS-2018-160-BN有源石英晶振ECS-1633-260-BN-TR石英晶體振蕩器ECS-3525-480-B-TR貼片晶振ECS-3225S18-270-FN-TR伊西斯晶振ECS-250-10-37Q-ES-TR美國(guó)進(jìn)口晶振ECS-300-20-3X-EN-TR晶振ECX-L32CM-156.250高頻晶振

      ECX-P33BN-200.000美國(guó)伊西斯晶振ECS-TXO-5032-120-TR伊西斯SMD晶振ECS-1618-480-BN-TR低抖動(dòng)晶振ECS-3525-600-B-TR進(jìn)口晶體振蕩器ECS-3225S18-320-FN-TR石英晶振ECS-260-10-37Q-ES-TR耐高溫晶振ECS-240-20-5PX-TR石英晶體ECX-L32CM-16.000有源晶振ECX-P33BN-212.500有源晶振ECS-TXO-5032-160-TR美國(guó)ECS晶振ECS-3963-480-AU-TR高精密晶振ECS-3518-040-B-TR石英晶體振蕩器ECS-3225S18-400-FN-TR貼片晶振ECS-.327-12.5-34QCS-TR低損耗晶振ECS-60-32-5PX-TR無(wú)源晶振ECX-L32CM-16.384有源晶振ECS-200-20-3X-TR耐高溫晶振ECX-L32CM-148.500高頻晶振ECX-P33BN-24.000石英晶體振蕩器ECS-TXO-3225-100-TR有源晶振ECS-2033-040-AU有源石英晶振ECS-3518-080-B-TR有源晶振ECS-3953M-480-B-TR進(jìn)口晶體振蕩器ECS-42-12-5PX-TR高品質(zhì)晶振ECS-73-20-5PX-TR伊西斯晶振ECX-L32CM-18.432有源晶振ECS-3X8X石英晶振ECS-TXO-3225-200-TR石英晶體振蕩器ECS-3961-240-AU-TR伊西斯SMD晶振ECS-3953M-800-B-TR晶體振蕩器ECS-3953M-250-B-TR石英晶體振蕩器ECS-122.8-20-5PX-TR晶振ECS-92.1-20-5PX-TR石英晶振ECX-L32CM-20.000有源晶振ECS-.327-12.5-13美國(guó)進(jìn)口晶振ECS-2018-300-BN低抖動(dòng)晶振ECS-2033-240-AU美國(guó)伊西斯晶振ECS-VXO-73-32.768-TR大體積晶振ECS-3953M-080-B-TR有源晶振ECS-80-S-5PX-TR石英晶體ECS-40-S-5PX-TR美國(guó)進(jìn)口晶振ECX-L32CM-200.000高頻晶振ECS-40-20-5PXDN-TR無(wú)源晶振ECS-2018-250-BN高精密晶振ECS-3963-270-AU-TR有源晶振ECS-VXO-73-19.440-TR晶體振蕩器ECS-3953M-100-B-TR美國(guó)進(jìn)口晶振ECS-120-20-3X-EN-TR低損耗晶振ECS-160-S-5PX-TR耐高溫晶振ECS-80-18-5PXDN-TR伊西斯晶振ECS-2033-143-AU石英晶體振蕩器ECS-60-20-5PX-TR晶振ECS-3953M-240-B-TR伊西斯晶振ECS-200-20-3X-EN-TR高品質(zhì)晶振ECS-2033-320-AU低抖動(dòng)晶振ECS-184-S-5PX-TR石英晶體ECS-3518-143-B-TR伊西斯SMD晶振ECS-184-20-3X-TR美國(guó)進(jìn)口晶振ECX-L32CM-148.3516高頻晶振ECX-P33BN-16.000低抖動(dòng)晶振ECS-3953M-400-AU-TR石英晶體振蕩器ECS-1618-260-BN-TR伊西斯SMD晶振ECS-3525-200-B-TR美國(guó)進(jìn)口晶振ECS-3225S18-160-FN-TR石英晶體振蕩器ECS-120-20-46X無(wú)源晶振ECS-245.7-20-3X-TR低損耗晶振

最后提醒大家在焊接電子元件，晶振產(chǎn)品前，如果是手工焊接的情況下必須手上要帶上安全防靜電環(huán)，以免對(duì)產(chǎn)品造成不必要的損壞。產(chǎn)品本身需要有良好的可含性，焊接表面必須清潔，使用合適的助焊劑，電烙鐵的溫度需要適應(yīng)，不應(yīng)太高的溫度，焊接速度要快，盡量不反復(fù)焊接，以免對(duì)晶振內(nèi)部產(chǎn)生損壞。

晶振行業(yè)人士眾所周知石英晶體原名稱呼為水晶體，主要成分有天然和人工，人工主要成分SiO2，以及化學(xué)材料，和到光學(xué)材料，當(dāng)然最主要的還是壓電材料了。壓電石英晶體最主要的特征是原子或者是分子，是非常有規(guī)律的排列。反映在宏觀上是外形的對(duì)稱性。人造水晶在高溫高壓下結(jié)晶而成。在電場(chǎng)的作用下，晶振內(nèi)部產(chǎn)生應(yīng)力而形變，從而產(chǎn)生機(jī)械振動(dòng)，獲得特定的頻率。